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| 1T387 Variable Capacitance Diode For the availability of this product, please contact the sales office. Description The 1T387 is a variable capacitance diode designed for electronic tuning of BS and CS tuners using a super miniature package (SMVC). Features * Super miniature package * Low series resistance: 1.5 Max. (f = 470MHz) * Large capacitance ratio: 14.6 Typ. (C1/C25) * Small leakage current: 10nA Max. (VR = 25V) * Capacitance deviation in a matching group: within 6% Applications Electronic tuning of BS and CS tuners Structure Silicon epitaxial planar type diode M-235 Absolute Maximum Ratings (Ta = 25C) * Reverse voltage VR 30 V * Peak reverse voltage VRM 35 V (RL 10k) * Operating temperature Topr -20 to +75 C * Storage temperature Tstg -65 to +150 C Electrical Characteristics Item Reverse voltage Reverse current Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol VR IR C1 C25 C1/C25 rs C VR = 5V, f = 470MHz VR = 1 to 25V, f = 1MHz Conditions IR = 1A VR = 25V VR = 1V, f = 1MHz VR = 25V, f = 1MHz 7.84 0.54 12.2 14.6 1.30 Min. 30.0 Typ. (Ta = 25C) Max. Unit V 10.0 9.44 0.64 nA pF pF % 1.50 6.0 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E00421-PS 1T387 Diode capacitance vs. Reverse voltage 10 5 1000 Reverse current vs. Ambient temperature VR = 25V C - Diode capacitance [pF] 2 1 0.5 IR - Reverse current [pA] 1 10 20 50 100 0.2 0.1 2 5 VR - Reverse voltage [V] 10 -20 0 20 40 60 80 Ta - Ambient temperature [C] Forward voltage vs. Ambient temperature 0.90 45 IF = 1mA 0. 80 Reverse voltage vs. Ambient temperature VR - Reverse voltage [V] IR = 10A 40 VF - Forward voltage [V] 0.70 35 0.60 -20 0 20 40 60 80 30 -20 0 20 40 60 80 Ta - Ambient temperature [C] Ta - Ambient temperature [C] -2- 1T387 Diode capacitance vs. Ambient temperature 1.03 VR = 1V 100 Reverse current vs. Reverse voltage C (Ta)/C (25C) - Diode capacitance 1.02 VR = 2V VR = 7V VR = 25V VR = 15V 1.01 1.00 IR - Reverse current [pA] 10 Ta = 80C 0.99 Ta = 60C 1 0.98 -20 0 20 40 60 80 Ta - Ambient temperature [C] Ta = 25C 0.1 1 3 10 30 Temperature coefficient of diode capacitance Temperature coefficient [ppm/C] 1000 500 VR - Reverse voltage [V] 200 100 50 30 1 2 5 10 20 50 VR - Reverse voltage [V] -3- 1T387 Package Outline Unit: mm M-235 + 0.2 1.25 - 0.1 + 0.1 0.3 - 0.05 0.2 0.9 0.1 2 1.7 0.1 1 + 0.1 0.3 - 0.05 2.5 0.2 0 0.05 + 0.1 0.11 - 0.06 0 to 10 NOTE: Dimension "" does not include mold protrusion. SONY CODE EIAJ CODE JEDEC CODE M-235 PACKAGE WEIGHT 0.1g Marking CATHODE MARK 2 87 B 1 -4- Sony Corporation Note B: Lot No. (Year and Month of manufacture) Year; Last one digit Month; A, B, C (for Oct. to Dec.) 1 to 9 (for Jan. to Sept.) This datasheet has been download from: www..com Datasheets for electronics components. |
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